A soluble pentacene precursor: synthesis, solid-state conversion into pentacene and application in a field-effect transistor. Dopant density determination in disordered organic field-effect transistors. Analytical modelling of the CMOS-like a-Si:H TFT inverter circuit. Temperature dependence of the charge injection in poly-dialkoxy-p-phenylene vinylene. Van Woudenbergh, T., Blom, P.W.M., Vissenberg, M.C.J.M. Device simulation of all-polymer thin-film transistors. Theory of the field-effect mobility in amorphous organic transistors. Switch-on voltage in disordered organic field-effect transistors. Modelling of ambipolar a-Si:H thin-film transistors. Poly(indenofluorene) (PIF), a novel low band gap polyhydrocarbon. Physics of Semiconductor Devices (Wiley, New York, 1981). On interface dipole layers between C60 and Ag or Au. Veenstra, S.C., Heeres, A., Hadziioannou, G., Sawatzky, G.A. Electric-field and temperature dependence of the hole mobility in poly(p-phenylene vinylene). Polymeric bipolar thin-film transistor utilizing conducting polymer containing electron transport dye. High-performance all-polymer integrated circuits. Integrated optoelectronic devices based on conjugated polymers. Plastic transistor in active-matrix displays. Organic field-effect bipolar transistors. Organic heterostructure field-effect transistors. Large-scale complementary integrated circuits based on organic transistors. Organic thin film transistors for large area electronics. Polymer photovoltaic cells: enhanced efficiencies via a network of internal donor-acceptor heterojunctions. Yu, G., Gao, J., Hummelen, J.C., Wudl, F. Light-emitting diodes based on conjugated polymers. We combine the organic ambipolar transistors into functional CMOS-like inverters.īurroughes, J.H. This ambipolar transport is observed in polymers based on interpenetrating networks as well as in narrow bandgap organic semiconductors. We demonstrate, by using solution-processed field-effect transistors, that hole transport and electron transport are both generic properties of organic semiconductors. For the design of efficient organic integrated circuits, there is an urgent need for complementary technology, where both n-type and p-type transistor operation is realized in a single layer, while maintaining the attractiveness of easy solution processing.
This complementary technology has enabled the construction of digital circuits, which operate with a high robustness, low power dissipation and a good noise margin. Monocrystalline silicon technology is largely based on complementary MOS (CMOS) structures that use both n-type and p-type transistor channels. There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors.
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